sot-23 plastic-encapsulate mosfets cj2302 s n-channel 20-v(d-s) mosfet feature trenchfet power mosfet applications z load switch for portable devices z dc/dc converter marking: s2u maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 20 gate-source voltage v gs 8 v continuous drain current (t j =150 ) i d 2.1 pulsed drain current i dm 10 continuous source-drain current(diode conduction) i s 0.6 a power dissipation p d 0.35 w thermal resistance from junction to ambient ( t 5s) r ja 357 /w operating junction t j 150 storage temperature t stg -55 ~+150 so t -23 1. gate 2. source 3. drain 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,jul,2011
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max units static drain-source breakdown voltage v (br)dss v gs = 0v, i d =10a 20 gate-threshold voltage v gs(th) v ds =v gs , i d =50a 0.65 0.95 1.2 v gate-body leakage i gss v ds =0v, v gs =8v 100 na zero gate voltage drain current i dss v ds =20v, v gs =0v 1 a v gs =4.5v, i d =3.6a 0.045 0.060 drain-source on-resistance a r ds(on) v gs =2.5v, i d =3.1a 0.070 0.115 ? forward transconductance a g fs v ds =5v, i d =3.6a 8 s diode forward voltage v sd i s =0.94a,v gs =0v 0.76 1.2 v dynamic total gate charge q g 4.0 10 gate-source charge q gs 0.65 gate-drain charge q gd v ds =10v,v gs =4.5v,i d =3.6a 1.5 nc input capacitance c iss 300 output capacitance c oss 120 reverse transfer capacitance c rss v ds =10v,v gs =0v,f=1mhz 80 pf switching turn-on delay time t d (on) 7 15 rise time t r 55 80 turn-off delay time t d(off) 16 60 fall time t f v dd =10v, r l =5.5 ? , i d 3.6a, v gen =4.5v,rg=6 ? 10 25 ns notes : a. pulse test : pulse width 300s, duty cycle 2%. 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,jul,2011
0.0 0.4 0.8 1.2 1.6 2.0 0.1 1 10 0.0 0.5 1.0 1.5 2.0 2.5 0 2 4 6 8 10 0246810 0 50 100 150 200 250 300 0 5 10 15 20 25 30 20 40 60 80 100 120 0246810 0 5 10 15 20 source current i s (a) source to drain voltage v sd (v) t a =25 pulsed transfer characteristics drain current i d (a) gate to source voltage v gs (v) cj2302 s t a =25 pulsed i d =3.6a ?? v gs r ds(on) on-resistance r ds(on) (m ) gate to source voltage v gs (v) i s ?? v sd t a =25 pulsed t a =25 pulsed t a =25 pulsed v gs =2.5v v gs =4.5v i d ?? r ds(on) on-resistance r ds(on) (m ) drain current i d (a) v gs =3.5 3.0 2.5v output characteristics v gs =2.0v v gs =1.5v drain current i d (a) drain to source voltage v ds (v) 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,jul,2011
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